GaAs multilayer p-i homojunction far-infrared detectors
نویسندگان
چکیده
A molecular beam epitaxy grown wavelength tunable GaAs p-i homojunction interfacial work-function internal photoemission far-infrared detector is developed. The multilayer (p-ip-i. . . ! detector structures consist of 2, 5, and 10 emitter layers. Experimental results are explained in terms of the number of emitter layers and the doping concentrations of the emitter layer. A detector with 10 multilayers and an emitter layer doping concentration (Ne) of 3310 18
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تاریخ انتشار 1997